Technology Development Engineer (m/f/d)

Tätigkeitsprofil:

The position:
As a member of the the SiGe-BiCMOS team within the department technology you will contribute to core research projects of IHP. An international team of highly motivated researchers, PhD's and technitians is looking forward to
you. Flat hierarchies and mutual support are important to us. We see diversity of perspectives as a great advantage for our team.
Your research will be focused on device physics and fabrication technologies of high-speed SiGe heterojunction bipolar transistors (HBT). This includes optimization of the SiGe BiCMOS technology for emerging new applications
such as ultra-high data rate communication systems, THz imaging and sensing, and quantum technologies. Your tasks include research into new active and passive radio-frequency devices and their integration into a technology platform
for the manufacture of integrated circuits. The work will be embedded in leading national and international research projects on high-frequency electronics.

Anforderungsprofil:

Your qualifications:
You hold a master’s or PhD degree in electrical engineering or physics. You are already experienced in semiconductor device physics. Ideally, but not mandatory you have a background in silicon process technology.
You are also a strong team player. We are looking for a team member, who is able to structure his or her own work and to bring a well-organized and systematic way of working into the cooperation with creative minds. You are an
ideal match for this position, when you have experimental, analytical and problem-solving skills, very strong communicative skills and the ability to quickly learn how to operate the latest technical equipment including various
software. It is necessary that you confidently handle the English language. Knowledge of the German language iswelcome. The deepening of German language skills is expected and highly encouraged, for example in in-house
language courses and intensive courses.